- 专利标题： Method of fabricating semiconductor device
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申请号： US15053404申请日： 2016-02-25
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公开(公告)号： US09640429B2公开(公告)日： 2017-05-02
- 发明人: Masahiro Nishi
- 申请人： Sumitomo Electric Device Innovations, Inc.
- 申请人地址： JP Yokohama-shi
- 专利权人： SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- 当前专利权人： SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- 当前专利权人地址： JP Yokohama-shi
- 代理机构： Venable LLP
- 代理商 Michael A. Sartori; Laura G. Remus
- 优先权： JP2012-237440 20121029; JP2012-237446 20121029
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L23/532 ; H01L21/285 ; H01L29/66 ; H01L29/20
摘要：
A method of fabricating a semiconductor device includes: forming a metal layer containing Al; forming an insulating film on the metal layer; forming an opening pattern to the insulating film, the metal layer being exposed in the opening pattern; and forming a wiring layer in the opening pattern, a first portion being disposed between an edge of the wiring layer and an edge of the opening pattern, a width of the first portion being 1 μm or less, and the metal layer being exposed in the first portion.
公开/授权文献
- US20160172233A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE 公开/授权日：2016-06-16
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