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公开(公告)号：US12125774B2
公开(公告)日：2024-10-22
申请号：US17738342
申请日：2022-05-06
IPC分类号： H01L23/495 , H01L21/56 , H01L23/31 , H01L29/267 , H01L29/78
CPC分类号： H01L23/49562 , H01L21/561 , H01L23/3121 , H01L23/49582 , H01L29/267 , H01L29/78
摘要： A semiconductor device includes a semiconductor chip in which a field effect transistor mainly containing GaN is formed on a surface of a SiC semiconductor substrate. The semiconductor device includes a metal base on which a back surface of the semiconductor chip is mounted through a conductive adhesive material containing Ag and a resin mold configured to seal the semiconductor chip. A metal having wettability lower than wettability of Au or Cu with respect to Ag is exposed in a region extending along an edge of the back surface.
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公开(公告)号：US20230411319A1
公开(公告)日：2023-12-21
申请号：US18179639
申请日：2023-03-07
发明人： Yuya TSUTSUMI , Masaomi EMORI
IPC分类号： H01L23/00
CPC分类号： H01L24/05 , H01L24/29 , H01L24/32 , H01L24/03 , H01L21/76898
摘要： A semiconductor device includes a substrate having a first main surface and a second main surface opposite to the first main surface, and a first conductive layer covering the second main surface and including dendrites, wherein a via hole extending through the substrate and having an inner wall surface is formed in the substrate, and wherein the first conductive layer covers the inner wall surface.
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公开(公告)号：US20230379060A1
公开(公告)日：2023-11-23
申请号：US17913736
申请日：2021-03-26
发明人： Ryutaro TAKEI , Takayuki SUZUKI
IPC分类号： H04B10/50 , H04B10/516
CPC分类号： H04B10/503 , H04B10/516
摘要： An optical transmitter includes an optical transmission unit, a drive unit, an arithmetic circuit, and a bias supply circuit. The optical transmission unit includes a laser element. The drive unit drives the laser element according to a first transmission signal. The arithmetic circuit generates a second transmission signal. The bias supply circuit superimposes the second transmission signal on a bias current of the laser element. An output of the arithmetic circuit containing the second transmission signal is a digital signal in a rectangular wave form based on a reference clock having a frequency lower than a reference clock frequency of the first transmission signal. The bias supply circuit includes a circuit element for inclining a rising portion and a falling portion of the output of the arithmetic circuit.
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公开(公告)号：US11757695B2
公开(公告)日：2023-09-12
申请号：US17542710
申请日：2021-12-06
发明人： Ruikang Yang , Michael Russo , Simon Hamparian
CPC分类号： H04L27/367 , H04L27/2695 , H04L27/3836
摘要： Various embodiments of the present disclosure relate to transmitter systems, methods, and instructions for signal predistortion. The transmitter system includes an intermodulation distortion (IMD) filter module configured to filter a detected feedback signal (Yin) to generate a targeted filtered signal (Yout), a digital pre-distortion (DPD) coefficient estimation module configured to update signal generation coefficients based on comparing an input signal (Sin) with the targeted filtered signal (Yout), and a distortion compensation processing module configured to generate a pre-distorted signal (Uout) based on the input signal (Sin) using the updated signal generation coefficients.
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公开(公告)号：US11757052B2
公开(公告)日：2023-09-12
申请号：US17188335
申请日：2021-03-01
发明人： Yoshihiro Yoneda , Koji Ebihara , Takuya Okimoto
IPC分类号： H01L31/0232 , H01L31/0304 , H01L31/0352 , H01L31/109
CPC分类号： H01L31/02327 , H01L31/03046 , H01L31/035281 , H01L31/109
摘要： A semiconductor light receiving element includes a first semiconductor layer, a waveguide type photodiode structure, an optical waveguide structure, and a fourth semiconductor layer. The waveguide type photodiode structure is provided on the first semiconductor layer. The waveguide type photodiode structure includes an optical absorption layer, a second semiconductor layer, a multiplication layer, and a third semiconductor layer. The optical waveguide structure is provided on the first semiconductor layer. The optical waveguide structure includes an optical waveguiding core layer and a cladding layer. An end face of the waveguide type photodiode structure faces to an end face of the optical waveguide structure. The fourth semiconductor layer is located between the end face of the waveguide type photodiode structure and the end face of the optical waveguide structure. The fourth semiconductor layer contacts the multiplication layer at the end face of the waveguide type photodiode structure.
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公开(公告)号：US20230282686A1
公开(公告)日：2023-09-07
申请号：US18108924
申请日：2023-02-13
发明人： Yasuyo YOTSUDA
IPC分类号： H01L21/302
CPC分类号： H01L28/56 , H01L28/75 , H01L21/302
摘要： A capacitor includes a substrate, a first electrode provided on the substrate, a dielectric film provided on the first electrode, a second electrode provided on the dielectric film and having an outer periphery positioned inside the outer periphery of the first electrode in a plan view viewed from above in a direction normal to an upper surface of the substrate, a third electrode that is in contact with the second electrode in a region inside the second electrode in the plan view, is separated upward from the first electrode and the dielectric film outside the region in the plan view, and has an outer periphery positioned inside the outer periphery of the first electrode and an outer periphery of the dielectric film in the plan view, and a protective film covering the second electrode and the third electrode and being in contact with the second electrode and the third electrode.
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公开(公告)号：US20230213047A1
公开(公告)日：2023-07-06
申请号：US18089662
申请日：2022-12-28
发明人： Masato HINO
CPC分类号： F16B1/00 , G02B6/4278
摘要： An optical transceiver includes an outer part provided outside the apparatus upon an engagement of the optical transceiver with the apparatus. The outer part includes a first spindle, a rotational member, a sliding member. The rotational member is configured to rotate on the first spindle. The sliding member is configured to move along the first direction. The rotational member has a hole. The sliding member has a second spindle. The first spindle and the second spindle are fit with the hole. The optical transceiver includes an inner part provided inside the apparatus upon the engagement with the apparatus. The hole has a first circular area, a second circular area, and a straight area. The first spindle is fit with the first circular area. The second spindle is fit with the second circular area. The straight area is connected between the first circular area and the second circular area.
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公开(公告)号：US11626323B2
公开(公告)日：2023-04-11
申请号：US17177042
申请日：2021-02-16
发明人： Toshiyuki Kosaka , Haruo Kawata
IPC分类号： H01L21/00 , H01L27/00 , H01L29/00 , H01L21/768 , H01L21/033 , H01L21/02 , H01L29/20 , H01L27/088 , H01L21/66 , H01L23/14
摘要： A semiconductor device is made by: forming a metal film containing Al on a surface of a substrate product including a substrate and a nitride semiconductor layer on the substrate, the metal film covering a via hole forming predetermined region, and the surface of the substrate product being located on the nitride semiconductor layer side, forming an etching mask having an opening for exposing the via hole forming predetermined region on a back surface of the substrate product, the back surface of the substrate product being located on the substrate side, and forming a via hole in the substrate product by reactive ion etching, the via hole reaching the surface from the back surface and exposing the metal film. In the forming of the via hole, a reaction gas containing fluorine is used during a period at least including a termination of etching.
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公开(公告)号：US20230097270A1
公开(公告)日：2023-03-30
申请号：US17952855
申请日：2022-09-26
发明人： Shingo INOUE
IPC分类号： H01L23/492 , H01L23/498 , H01L21/48 , H01L23/00
摘要： A package for a semiconductor device includes a metal base plate, a wall portion, a first metal film, and a lead portion. The base plate has a first region and a second region surrounding the first region. The wall portion has a first frame body comprising metal and a second frame body comprising resin. The first frame body is provided on the second region. The second frame body is provided on the first frame body. The first metal film is provided on the second frame body. The lead portion is conductively bonded to the first metal film. The first frame body is conductively bonded to the base plate. A thickness of the first frame body in a first direction that is a direction in which the first frame body and the second frame body are arranged is larger than a thickness of the first metal film in the first direction.
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公开(公告)号：US20230094768A1
公开(公告)日：2023-03-30
申请号：US17940111
申请日：2022-09-08
发明人： Yukinori NOSE
摘要： A semiconductor device includes a substrate, a semiconductor layer disposed on the substrate, an insulating layer disposed on the semiconductor layer and having a first opening formed therein, a gate electrode disposed on the insulating layer and in contact with the semiconductor layer via the first opening, and a source electrode and a drain electrode in ohmic contact with the semiconductor layer. The gate electrode includes a crystallinity control film disposed on the insulating layer and having a second opening formed such that an inner wall thereof extends to an inner wall of the first opening toward the substrate in plan view in a direction perpendicular to a top surface of the substrate, and a first metal film disposed on the crystallinity control film and in Schottky contact with the semiconductor layer via the inner walls, extending to each other, of the second opening and the first opening.
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