Invention Grant
- Patent Title: Semiconductor devices and methods of fabricating the same
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Application No.: US14925679Application Date: 2015-10-28
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Publication No.: US09640658B2Publication Date: 2017-05-02
- Inventor: Dong Hyuk Kim , Dongsuk Shin , Myungsun Kim , Hoi Sung Chung
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Priority: KR10-2011-0026052 20110323
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/45 ; H01L21/02 ; H01L21/8234 ; H01L29/66 ; H01L27/088 ; H01L29/08 ; H01L29/06 ; H01L29/165 ; H01L27/092 ; H01L29/16 ; H01L29/161 ; H01L21/306 ; H01L21/3065
Abstract:
A method of fabricating one or more semiconductor devices includes forming a trench in a semiconductor substrate, performing a cycling process to remove contaminants from the trench, and forming an epitaxial layer on the trench. The cycling process includes sequentially supplying a first reaction gas containing germane, hydrogen chloride and hydrogen and a second reaction gas containing hydrogen chloride and hydrogen onto the semiconductor substrate.
Public/Granted literature
- US20160049512A1 SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME Public/Granted day:2016-02-18
Information query
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