- Patent Title: Operating memory devices to apply a programming potential to a memory cell in a string coupled to a source and data line concurrently with biasing the data line to a greater potential than the source
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Application No.: US14995302Application Date: 2016-01-14
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Publication No.: US09646702B2Publication Date: 2017-05-09
- Inventor: Akira Goda , Yijie Zhao , Krishna Parat
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: G11C16/10
- IPC: G11C16/10 ; G11C16/04 ; G11C16/34

Abstract:
Methods of biasing in memory devices facilitate memory device programming operations. In at least one embodiment, a first string of memory cells comprising a selected memory cell and a second string of memory cells are coupled to a common data line and a common source, where the data line is biased to a potential greater than a potential to which the source is biased during a programming operation performed on the selected memory cell.
Public/Granted literature
- US20160133327A1 MEMORY DEVICES AND BIASING METHODS FOR MEMORY DEVICES Public/Granted day:2016-05-12
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