Invention Grant
- Patent Title: Resistive random access memory device with resistance-based storage element and method of fabricating same
-
Application No.: US14835314Application Date: 2015-08-25
-
Publication No.: US09647037B2Publication Date: 2017-05-09
- Inventor: Yu Lu , Xia Li , Seung Hyuk Kang
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Toler Law Group
- Main IPC: H01L27/24
- IPC: H01L27/24 ; H01L45/00
Abstract:
A method of fabrication of a device includes forming a first electrode and a second electrode. The method further includes forming a resistive material between the first electrode and the second electrode to form a resistance-based storage element of a resistive random access memory (RRAM) device.
Public/Granted literature
Information query
IPC分类:
