Invention Grant
- Patent Title: Silicon carbide semiconductor device
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Application No.: US15025930Application Date: 2014-09-15
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Publication No.: US09647108B2Publication Date: 2017-05-09
- Inventor: Naohiro Suzuki , Sachiko Aoi , Yukihiko Watanabe , Akitaka Soeno , Masaki Konishi
- Applicant: DENSO CORPORATION , TOYOTA JIDOSHA KABUSHIKI KAISHA
- Applicant Address: JP Kariya JP Toyota-shi
- Assignee: DENSO CORPORATION,TOYOTA JIDOSHA KABUSHIKI KAISHA
- Current Assignee: DENSO CORPORATION,TOYOTA JIDOSHA KABUSHIKI KAISHA
- Current Assignee Address: JP Kariya JP Toyota-shi
- Agency: Posz Law Group, PLC
- Priority: JP2013-207525 20131002
- International Application: PCT/JP2014/004744 WO 20140915
- International Announcement: WO2015/049838 WO 20150409
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/16 ; H01L29/66 ; H01L29/06 ; H01L29/08 ; H01L29/10 ; H01L29/167
Abstract:
A silicon carbide semiconductor device includes: a substrate; a drift layer; a current dispersion layer; a base region; a source region; trenches; a gate insulation film; a gate electrode; a source electrode; a drain electrode; and a bottom layer. The current dispersion layer is arranged on the drift layer, and has a first conductive type with an impurity concentration higher than the drift layer. The bottom layer has a second conductive type, is arranged under the base region, covers a bottom of each trench including a corner portion of the bottom of the trench, and has a depth equal to or deeper than the current dispersion layer.
Public/Granted literature
- US20160247910A1 SILICON CARBIDE SEMICONDUCTOR DEVICE Public/Granted day:2016-08-25
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