Invention Grant
- Patent Title: Semiconductor device
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Application No.: US14755670Application Date: 2015-06-30
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Publication No.: US09647129B2Publication Date: 2017-05-09
- Inventor: Motomu Kurata , Ryota Hodo , Shinya Sasagawa , Yuki Hata
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2014-138564 20140704
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/786 ; H01L29/24 ; H01L23/485 ; H01L27/1156 ; H01L27/06 ; H01L21/8258 ; H01L27/092
Abstract:
To provide a semiconductor device which occupies a small area and is highly integrated. The semiconductor device includes an oxide semiconductor layer, an electrode layer, and a contact plug. The electrode layer includes one end portion in contact with the oxide semiconductor layer and the other end portion facing the one end portion. The other end portion includes a semicircle notch portion when seen from the above. The contact plug is in contact with the semicircle notch portion.
Public/Granted literature
- US20160005872A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-01-07
Information query
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