Invention Grant
- Patent Title: Electronic device including laterally arranged P-type and N-type regions in a two dimensional (2D) material layer and method of manufacturing the same
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Application No.: US14554363Application Date: 2014-11-26
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Publication No.: US09647166B2Publication Date: 2017-05-09
- Inventor: Minsup Choi , Wonjong Yoo , Deshun Qu , Changho Ra , Xiaochi Liu , Seunghwan Lee , Jia Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.,Research & Business Foundation Sungyunkwan University
- Current Assignee: Samsung Electronics Co., Ltd.,Research & Business Foundation Sungyunkwan University
- Current Assignee Address: KR Gyeonggi-do KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2014-0061167 20140521
- Main IPC: H01L31/054
- IPC: H01L31/054 ; H01L29/06 ; H01L31/032 ; H01L31/18 ; H01L31/0224
Abstract:
According to example embodiments, an electronic device includes a substrate, an insulating layer on the substrate, and a diode layer on the insulating layer. The diode layer includes a two dimensional (2D) material layer. The 2D material layer includes an N-type region and a P-type region. According to example embodiments, a method of manufacturing an electronic device includes forming an insulating film on a substrate, forming a 2D material layer on the insulating film, and dividing the 2D material layer into an N-type region and a P-type region.
Public/Granted literature
- US20150340522A1 ELECTRONIC DEVICE INCLUDING HORIZONTAL TYPE DIODE USING 2D MATERIAL AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2015-11-26
Information query
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