发明授权
- 专利标题： Metallic device having mobile element in a cavity of the BEOL of an integrated circuit
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申请号： US14920621申请日： 2015-10-22
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公开(公告)号： US09653392B2公开(公告)日： 2017-05-16
- 发明人: Christian Rivero , Pascal Fornara , Sebastian Orellana
- 申请人： STMicroelectronics (Rousset) SAS
- 申请人地址： FR Rousset
- 专利权人： STMICROELECTRONICS (ROUSSET) SAS
- 当前专利权人： STMICROELECTRONICS (ROUSSET) SAS
- 当前专利权人地址： FR Rousset
- 代理机构： Slater Matsil, LLP
- 优先权： FR1552744 20150331
- 主分类号： H01L23/522
- IPC分类号： H01L23/522 ; H01L23/532 ; H01H59/00 ; H01H1/00 ; H01H61/00
摘要：
In order, for example, to improve the ohmic contact between two metal pieces located at a metallization level, these two metal pieces are equipped with two offset vias located at the metallization level and at least partially at the via level immediately above. Each offset via comprises, for example, a nonoxidizable or substantially nonoxidizable compound, such as a barrier layer of Ti/TiN.
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