Invention Grant
- Patent Title: Methods to enhance doping concentration in near-surface layers of semiconductors and methods of making same
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Application No.: US13997166Application Date: 2011-12-27
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Publication No.: US09653559B2Publication Date: 2017-05-16
- Inventor: Niloy Mukherjee , Gilbert Dewey , Marko Radosavljevic , Niti Goel , Sanaz Kabehie , Matthew V. Metz , Robert S. Chau
- Applicant: Niloy Mukherjee , Gilbert Dewey , Marko Radosavljevic , Niti Goel , Sanaz Kabehie , Matthew V. Metz , Robert S. Chau
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- International Application: PCT/US2011/067424 WO 20111227
- International Announcement: WO2013/100914 WO 20130704
- Main IPC: H01L29/417
- IPC: H01L29/417 ; H01L29/40 ; H01L21/225 ; H01L29/66 ; H01L21/768 ; H01L21/223 ; H01L21/265
Abstract:
A die includes a semiconductive prominence and a surface-doped structure on the prominence. The surface-doped structure makes contact with contact metallization. The prominence may be a source- or drain contact for a transistor. Processes of making the surface-doped structure include wet-vapor- and implantation techniques, and include annealing techniques to drive in the surface doping to only near-surface depths in the semiconductive prominence.
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