Invention Grant
- Patent Title: Doping control of metal nitride films
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Application No.: US14169937Application Date: 2014-01-31
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Publication No.: US09659814B2Publication Date: 2017-05-23
- Inventor: Annamalai Lakshmanan , Ben-Li Sheu , Guodan Wei , Nicole Lundy , Paul F. Ma
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L21/02 ; H01L21/768 ; H01L21/285 ; H01L23/532
Abstract:
Described are methods for controlling the doping of metal nitride films such as TaN, TiN and MnN. The temperature during deposition of the metal nitride film may be controlled to provide a film density that permits a desired amount of doping. Dopants may include Ru, Cu, Co, Mn, Mo, Al, Mg, Cr, Nb, Ta, Ti and V. The metal nitride film may optionally be exposed to plasma treatment after doping.
Public/Granted literature
- US20140220772A1 Doping Control of Metal Nitride Films Public/Granted day:2014-08-07
Information query
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