公开(公告)号：US11133155B2

公开(公告)日：2021-09-28

申请号：US16578602

申请日：2019-09-23

申请人： APPLIED MATERIALS, INC.

发明人： Daping Yao ,  Hyman W. H. Lam ,  John C. Forster ,  Jiang Lu ,  Can Xu ,  Dien-Yeh Wu ,  Paul F. Ma ,  Mei Chang

IPC分类号： C23C16/52 ,  H01J37/32 ,  C23C16/513 ,  C23C16/505 ,  C23C16/455 ,  C23C16/509 ,  C23C16/06

摘要： Embodiments of a gas delivery apparatus for use in a radio frequency (RF) processing apparatus are provided herein. In some embodiments, a gas delivery apparatus for use in a radio frequency (RF) processing apparatus includes: a conductive gas line having a first end and a second end; a first flange coupled to the first end; a second flange coupled to the second end, wherein the conductive gas line extends through and between the first and second flanges; and a block of ferrite material surrounding the conductive gas line between the first and second flanges.

公开(公告)号：US20210283650A1

公开(公告)日：2021-09-16

申请号：US17335829

申请日：2021-06-01

申请人： Applied Materials, Inc.

发明人： Chang Ke ,  Song-Moon Suh ,  Liqi Wu ,  Michael S. Jackson ,  Lei Zhou ,  Biao Liu ,  Cheng Pan ,  Paul F. Ma ,  Mei Chang

IPC分类号： B05D3/04 ,  B05D1/00 ,  C23C16/04 ,  C23C16/455 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/321

摘要： Methods and apparatus for removing deposits in self-assembled monolayer (SAM) based selective deposition process schemes using cryogenic gas streams are described. Some methods include removing deposits in self-assembled monolayer (SAM) based selective depositions by exposing the substrate to cryogenic aerosols to remove undesired deposition on SAM protected surfaces. Processing chambers for cryogenic gas assisted selective deposition are also described.

公开(公告)号：US11033930B2

公开(公告)日：2021-06-15

申请号：US16242184

申请日：2019-01-08

申请人： Applied Materials, Inc.

发明人： Chang Ke ,  Song-Moon Suh ,  Liqi Wu ,  Michael S. Jackson ,  Lei Zhou ,  Biao Liu ,  Cheng Pan ,  Paul F. Ma ,  Mei Chang

IPC分类号： B05D3/04 ,  B05D1/00 ,  C23C16/455 ,  C23C16/04 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/321 ,  B05D1/18

摘要： Methods and apparatus for removing deposits in self-assembled monolayer (SAM) based selective deposition process schemes using cryogenic gas streams are described. Some methods include removing deposits in self-assembled monolayer (SAM) based selective depositions by exposing the substrate to cryogenic aerosols to remove undesired deposition on SAM protected surfaces. Processing chambers for cryogenic gas assisted selective deposition are also described.

公开(公告)号：US10170321B2

公开(公告)日：2019-01-01

申请号：US15462214

申请日：2017-03-17

申请人： Applied Materials, Inc.

发明人： Wenyu Zhang ,  Wei V. Tang ,  Yixiong Yang ,  Chen-Han Lin ,  Yi Xu ,  Yu Lei ,  Naomi Yoshida ,  Lin Dong ,  Drew Phillips ,  Srividya Natarajan ,  Atashi Basu ,  Kaliappan Muthukumar ,  David Thompson ,  Paul F. Ma

IPC分类号： H01L21/285 ,  C23C14/14 ,  C23C12/00 ,  H01L29/66 ,  H01L29/45 ,  H01L21/28 ,  H01L29/49

摘要： Described are methods of depositing a titanium aluminum nitride film on a substrate surface with a controlled amount of carbon. The methods include exposing a substrate surface to a titanium precursor, a nitrogen reactant and an aluminum precursor with purges of the unreacted titanium and aluminum precursors and unreacted nitrogen reactants between each exposure.

公开(公告)号：US20180366317A1

公开(公告)日：2018-12-20

申请号：US16008495

申请日：2018-06-14

申请人： Applied Materials, Inc.

发明人： Chang Ke ,  Lei Zhou ,  Biao Liu ,  Cheng Pan ,  Yuanhong Guo ,  Liqi Wu ,  Michael S. Jackson ,  Ludovic Godet ,  Tobin Kaufman-Osborn ,  Erica Chen ,  Paul F. Ma

IPC分类号： H01L21/027 ,  H01L21/02 ,  H01L21/67

摘要： Methods of depositing a film selectively onto a first material relative to a second material are described. The substrate is pre-cleaned by heating the substrate to a first temperature, cleaning contaminants from the substrate and activating the first surface to promote formation of a self-assembled monolayer (SAM) on the first material. A SAM is formed on the first material by repeated cycles of SAM molecule exposure, heating and reactivation of the first material. A final exposure to the SAM molecules is performed prior to selectively depositing a film on the second material. Apparatus to perform the selective deposition are also described.

公开(公告)号：US20180340255A1

公开(公告)日：2018-11-29

申请号：US15989827

申请日：2018-05-25

申请人： Applied Materials, Inc.

发明人： Jing Zhou ,  Jacqueline S. Wrench ,  Jiang Lu ,  Paul F. Ma ,  Mei Chang

IPC分类号： C23C16/40 ,  H01L21/02 ,  C23C16/455

摘要： Embodiments of the invention provide methods of depositing a CoOx film at lower processing temperatures and with a higher deposition rate. The methods disclosed herein use cobalt tricarbonyl compounds to form the CoOx film. Both atomic layer deposition and chemical vapor deposition techniques are useful in depositing the CoOx film.

公开(公告)号：US10008412B2

公开(公告)日：2018-06-26

申请号：US15601525

申请日：2017-05-22

申请人： Applied Materials, Inc.

发明人： Annamalai Lakshmanan ,  Ben-Li Sheu ,  Guodan Wei ,  Nicole Lundy ,  Paul F. Ma

IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L21/285

CPC分类号： H01L21/76856 ,  H01L21/28562 ,  H01L21/76831 ,  H01L21/76841 ,  H01L21/76844 ,  H01L21/76862 ,  H01L21/76867 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： Described are methods for controlling the doping of metal nitride films such as TaN, TiN and MnN. The temperature during deposition of the metal nitride film may be controlled to provide a film density that permits a desired amount of doping. Dopants may include Ru, Cu, Co, Mn, Mo, Al, Mg, Cr, Nb, Ta, Ti and V. The metal nitride film may optionally be exposed to plasma treatment after doping.

公开(公告)号：US10002834B2

公开(公告)日：2018-06-19

申请号：US14711135

申请日：2015-05-13

申请人： Applied Materials, Inc.

发明人： Mehul B. Naik ,  Paul F. Ma ,  Tae Hong Ha ,  Srinivas Guggilla

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/285

CPC分类号： H01L23/53238 ,  H01L21/28556 ,  H01L21/76846

摘要： A method and apparatus for forming an interconnect on a substrate is provided. A protective layer is formed on the substrate and in a via formed on the substrate wherein the protective layer is resistant to a halogen containing material. A barrier layer is formed on top of the protective layer. The barrier layer comprises a halogen containing material. A metal layer is deposited over the barrier layer. In another embodiment, the protective layer is selectively deposited in the via.

公开(公告)号：US20170256448A1

公开(公告)日：2017-09-07

申请号：US15601525

申请日：2017-05-22

申请人： Applied Materials, Inc.

发明人： Annamalai Lakshmanan ,  Ben-Li Sheu ,  Guodan Wei ,  Nicole Lundy ,  Paul F. Ma

IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L21/285

CPC分类号： H01L21/76856 ,  H01L21/28562 ,  H01L21/76831 ,  H01L21/76841 ,  H01L21/76844 ,  H01L21/76862 ,  H01L21/76867 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： Described are methods for controlling the doping of metal nitride films such as TaN, TiN and MnN. The temperature during deposition of the metal nitride film may be controlled to provide a film density that permits a desired amount of doping. Dopants may include Ru, Cu, Co, Mn, Mo, Al, Mg, Cr, Nb, Ta, Ti and V. The metal nitride film may optionally be exposed to plasma treatment after doping.

公开(公告)号：US09076661B2

公开(公告)日：2015-07-07

申请号：US13905932

申请日：2013-05-30

申请人： Applied Materials, Inc.

发明人： Paul F. Ma ,  Jennifer Meng Tseng ,  Mei Chang ,  Annamalai Lakshmanan ,  Jing Tang

IPC分类号： H01L23/58 ,  H01L29/06 ,  H01L21/02 ,  H01L21/285 ,  H01L23/532 ,  H01L21/768 ,  C23C16/34 ,  C23C16/455

CPC分类号： H01L29/06 ,  C23C16/34 ,  C23C16/45525 ,  H01L21/02104 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76867 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： Described are methods of forming a semiconductor device. Certain methods comprises depositing a film comprising manganese nitride over a dielectric; depositing a copper seed layer over the film; and depositing a copper fill layer over the copper seed layer. Also described are semiconductor devices. Certain semiconductor devices comprise a low-k dielectric layer; a manganese nitride layer overlying the low-k dielectric layer; a seed layer selected from a copper seed layer or electrochemical deposition seed layer overlying the manganese nitride layer; a copper layer overlying the copper seed layer.

摘要翻译： 描述了形成半导体器件的方法。 某些方法包括在电介质上沉积包含氮化锰的膜; 在该膜上沉积铜种子层; 以及在铜种子层上沉积铜填充层。 还描述了半导体器件。 某些半导体器件包括低k电介质层; 覆盖低k电介质层的氮化锰层; 选自铜籽晶层或覆盖氮化锰层的电化学沉积种子层的晶种层; 覆铜层的铜层。