Invention Grant
- Patent Title: Semiconductor die substrate with integral heat sink
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Application No.: US14841081Application Date: 2015-08-31
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Publication No.: US09659844B2Publication Date: 2017-05-23
- Inventor: Rajarshi Mukhopadhyay , Daniel N. Carothers , Benjamin Cook
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent John R. Pessetto; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/495 ; H01L23/367 ; H01L23/31 ; H01L21/48
Abstract:
An integrated circuit device includes a semiconductor substrate with a top surface, a bottom surface opposite the top surface and an intermediate portion positioned between the top and bottom surfaces. The device also includes interior substrate surfaces defined by at least one void extending from the bottom surface to the intermediate portion.
Public/Granted literature
- US20170062316A1 SEMICONDUCTOR DIE SUBSTRATE WITH INTEGRAL HEAT SINK Public/Granted day:2017-03-02
Information query
IPC分类:
