- Patent Title: Double side via last method for double embedded patterned substrate
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Application No.: US14696355Application Date: 2015-04-24
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Publication No.: US09659853B2Publication Date: 2017-05-23
- Inventor: You-Lung Yen , Chih-Cheng Lee , Yuan-Chang Su
- Applicant: Advanced Semiconductor Engineering, Inc.
- Applicant Address: TW Kaosiung
- Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- Current Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- Current Assignee Address: TW Kaosiung
- Agency: Foley & Lardner LLP
- Agent Cliff Z. Liu
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/498 ; H01L23/31 ; H01L21/48 ; H01L21/683 ; H01L23/544

Abstract:
An interposer substrate includes a first circuit pattern embedded at a first surface of a dielectric layer and a second circuit pattern embedded at a second surface of the dielectric layer; a middle patterned conductive layer in the dielectric layer between the first circuit pattern and the second circuit pattern; first conductive vias, where each first conductive via includes a first end adjacent to the first circuit pattern and a second end adjacent to the middle patterned conductive layer, wherein a width of the first end is greater than a width of the second end; second conductive vias, where each second conductive via including a third end adjacent to the second circuit pattern and a fourth end adjacent to the middle patterned conductive layer, wherein a width of the third end is greater than a width of the fourth end.
Public/Granted literature
- US20160315041A1 DOUBLE SIDE VIA LAST METHOD FOR DOUBLE EMBEDDED PATTERNED SUBSTRATE Public/Granted day:2016-10-27
Information query
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