- Patent Title: Semiconductor device and method of fabricating semiconductor device
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Application No.: US14856577Application Date: 2015-09-17
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Publication No.: US09659948B2Publication Date: 2017-05-23
- Inventor: Chia-Ching Hsu , Ko-Chi Chen , Shen-De Wang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L27/11529
- IPC: H01L27/11529 ; H01L27/11573 ; H01L27/11531
Abstract:
A semiconductor device includes a substrate with a memory region and a logic region, a logic gate stack, and a non-volatile gate stack. The substrate has a recess disposed in the memory region. The logic gate stack is disposed in the logic region and has a first top surface. The non-volatile gate stack is disposed in the recess and has a second top surface. The second top surface is lower than the first top surface by a step height.
Public/Granted literature
- US20170084622A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE Public/Granted day:2017-03-23
Information query
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