- Patent Title: Method to form localized relaxed substrate by using condensation
-
Application No.: US15084312Application Date: 2016-03-29
-
Publication No.: US09660081B2Publication Date: 2017-05-23
- Inventor: Pierre Morin , Nicolas Loubet
- Applicant: STMicroelectronics, Inc.
- Applicant Address: US TX Coppell
- Assignee: STMICROELECTRONICS, INC.
- Current Assignee: STMICROELECTRONICS, INC.
- Current Assignee Address: US TX Coppell
- Agency: Seed IP Law Group LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L21/225 ; H01L29/165 ; H01L29/06 ; H01L29/16 ; H01L29/161 ; H01L29/786 ; H01L29/10
Abstract:
Methods and structures for forming a localized, strained region of a substrate are described. Trenches may be formed at boundaries of a localized region of a substrate. An upper portion of sidewalls at the localized region may be covered with a covering layer, and a lower portion of the sidewalls at the localized region may not be covered. A converting material may be formed in contact with the lower portion of the localized region, and the substrate heated. The heating may introduce a chemical species from the converting material into the lower portion, which creates stress in the localized region. The methods may be used to form strained-channel finFETs.
Public/Granted literature
- US20160211376A1 METHOD TO FORM LOCALIZED RELAXED SUBSTRATE BY USING CONDENSATION Public/Granted day:2016-07-21
Information query
IPC分类:
