Invention Grant
- Patent Title: LDMOS finFET device and method of manufacture using a trench confined epitaxial growth process
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Application No.: US14560255Application Date: 2014-12-04
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Publication No.: US09660083B2Publication Date: 2017-05-23
- Inventor: Qing Liu , Ruilong Xie , Chun-Chen Yeh , Xiuyu Cai
- Applicant: STMicroelectronics, Inc. , International Business Machines Corporation , GlobalFoundries Inc
- Applicant Address: US TX Coppell KY Grand Cayman US NY Armonk
- Assignee: STMICROELECTRONICS, INC.,GLOBALFOUNDRIES INC,INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: STMICROELECTRONICS, INC.,GLOBALFOUNDRIES INC,INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US TX Coppell KY Grand Cayman US NY Armonk
- Agency: Gardere Wynne Sewell LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/08 ; H01L29/417 ; H01L29/66 ; H01L21/8234 ; H01L21/84 ; H01L27/088 ; H01L27/12

Abstract:
A FinFET transistor includes a fin of semiconductor material with a transistor gate electrode extending over a channel region. Raised source and drain regions of first epitaxial growth material extending from the fin on either side of the transistor gate electrode. Source and drain contact openings extend through a pre-metallization dielectric material to reach the raised source and drain regions. Source and drain contact regions of second epitaxial growth material extend from the first epitaxial growth material at the bottom of the source and drain contact openings. A metal material fills the source and drain contact openings to form source and drain contacts, respectively, with the source and drain contact regions. The drain contact region may be offset from the transistor gate electrode by an offset distance sufficient to provide a laterally diffused metal oxide semiconductor (LDMOS) configuration within the raised source region of first epitaxial growth material.
Public/Granted literature
- US20160163850A1 LDMOS FINFET DEVICE AND METHOD OF MANUFACTURE USING A TRENCH CONFINED EPITAXIAL GROWTH PROCESS Public/Granted day:2016-06-09
Information query
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