Invention Grant
- Patent Title: Thin film transistor and method of driving same
-
Application No.: US14453137Application Date: 2014-08-06
-
Publication No.: US09660091B2Publication Date: 2017-05-23
- Inventor: Eok-su Kim , Myung-kwan Ryu , Kyoung-seok Son , Sung-hee Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2013-0106820 20130905
- Main IPC: H01L29/786
- IPC: H01L29/786 ; G02F1/133 ; G02F1/1368 ; H01L27/12 ; H01L29/417 ; H01L29/423 ; G09G3/36 ; H01L29/49
Abstract:
A thin film transistor (TFT) and a method of driving the same are disclosed. The TFT includes: an active layer; a bottom gate electrode disposed below the active layer to drive a first region of the active layer; and a top gate electrode disposed on the active layer to drive a second region of the active layer. The TFT controls the conductivity of the active layer by using the bottom gate electrode and the top gate electrode.
Public/Granted literature
- US20150062475A1 THIN FILM TRANSISTOR AND METHOD OF DRIVING SAME Public/Granted day:2015-03-05
Information query
IPC分类:
