Invention Grant
- Patent Title: Multiple light-emitting element device
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Application No.: US14920281Application Date: 2015-10-22
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Publication No.: US09660220B2Publication Date: 2017-05-23
- Inventor: Shogo Uesaka , Toshiki Sasaki , Riho Kataishi , Satoshi Seo
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2014-216876 20141024
- Main IPC: H01L51/52
- IPC: H01L51/52 ; H01L51/50 ; H01L27/32

Abstract:
To provide a novel light-emitting element or a novel light-emitting device with high emission efficiency and low power consumption, a light-emitting element having a plurality of light-emitting layers between a pair of electrodes includes a lower electrode, a first light-emitting layer over the lower electrode, a charge-generation layer over the first light-emitting layer, a second light-emitting layer over the charge-generation layer, and an upper electrode over the second light-emitting layer. An emission spectrum of the first light-emitting layer peaks at a longer wavelength than an emission spectrum of the second light-emitting layer. A distance of between a bottom surface of the upper electrode and a bottom surface of the first light-emitting layer is less than or equal to 130 nm.
Public/Granted literature
- US20160126500A1 Light-Emitting Element, Light-Emitting Device, Electronic Device, and Lighting Device Public/Granted day:2016-05-05
Information query
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