公开(公告)号：US20170256743A1

公开(公告)日：2017-09-07

申请号：US15596341

申请日：2017-05-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shogo Uesaka ,  Toshiki Sasaki ,  Riho Kataishi ,  Satoshi Seo

IPC: H01L51/52 ,  H01L51/50

CPC classification number: H01L51/5265 ,  H01L27/323 ,  H01L51/5036 ,  H01L51/504 ,  H01L51/5044 ,  H01L2251/5376

Abstract: To provide a novel light-emitting element or a novel light-emitting device with high emission efficiency and low power consumption, a light-emitting element having a plurality of light-emitting layers between a pair of electrodes includes a lower electrode, a first light-emitting layer over the lower electrode, a charge-generation layer over the first light-emitting layer, a second light-emitting layer over the charge-generation layer, and an upper electrode over the second light-emitting layer. An emission spectrum of the first light-emitting layer peaks at a longer wavelength than an emission spectrum of the second light-emitting layer. A distance of between a bottom surface of the upper electrode and a bottom surface of the first light-emitting layer is less than or equal to 130 nm.

公开(公告)号：US09660220B2

公开(公告)日：2017-05-23

申请号：US14920281

申请日：2015-10-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shogo Uesaka ,  Toshiki Sasaki ,  Riho Kataishi ,  Satoshi Seo

IPC: H01L51/52 ,  H01L51/50 ,  H01L27/32

CPC classification number: H01L51/5265 ,  H01L27/323 ,  H01L51/5044 ,  H01L2251/5376

Abstract: To provide a novel light-emitting element or a novel light-emitting device with high emission efficiency and low power consumption, a light-emitting element having a plurality of light-emitting layers between a pair of electrodes includes a lower electrode, a first light-emitting layer over the lower electrode, a charge-generation layer over the first light-emitting layer, a second light-emitting layer over the charge-generation layer, and an upper electrode over the second light-emitting layer. An emission spectrum of the first light-emitting layer peaks at a longer wavelength than an emission spectrum of the second light-emitting layer. A distance of between a bottom surface of the upper electrode and a bottom surface of the first light-emitting layer is less than or equal to 130 nm.

公开(公告)号：US20130180577A1

公开(公告)日：2013-07-18

申请号：US13732604

申请日：2013-01-02

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yoshinobu ASAMI ,  Riho Kataishi

IPC: H01L31/0352

CPC classification number: H01L31/0352 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/02245 ,  H01L31/02363 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/074 ,  Y02E10/547

Abstract: To provide a photoelectric conversion device including a passivation film in which an opening for connection to an electrode does not need to be provided. The photoelectric conversion device includes, between a pair of electrodes, a silicon substrate having p-type conductivity; a silicon semiconductor layer having n-type conductivity which is provided over one surface of the silicon substrate and in contact with one of the pair of electrodes; and an oxide semiconductor layer having p-type conductivity which is provided over the other surface of the silicon substrate and in contact with the other of the pair of electrodes. The oxide semiconductor layer is formed using an inorganic compound which contains an oxide of a metal belonging to any of Groups 4 to 8 in the periodic table as its main component and whose band gap is greater than or equal to 2 eV.

Abstract translation: 为了提供一种包括钝化膜的光电转换装置，其中不需要提供用于连接到电极的开口。 光电转换装置在一对电极之间包括具有p型导电性的硅衬底; 具有n型导电性的硅半导体层，其设置在所述硅衬底的一个表面上并与所述一对电极中的一个电极接触; 以及具有p型导电性的氧化物半导体层，其设置在所述硅基板的另一表面上并与所述一对电极中的另一个接触。 氧化物半导体层使用含有属于元素周期表中第4至8族中的任何一种的金属的氧化物作为其主要成分并且其带隙大于或等于2eV的无机化合物形成。

公开(公告)号：US09754980B2

公开(公告)日：2017-09-05

申请号：US15193677

申请日：2016-06-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yusuke Nonaka ,  Riho Kataishi ,  Hiroshi Ohki ,  Yuichi Sato ,  Daisuke Matsubayashi

IPC: H01L27/146 ,  H01L31/0224 ,  H01L31/0272 ,  H01L31/0296 ,  H01L31/109

CPC classification number: H01L27/14607 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14647 ,  H01L27/14665 ,  H01L27/14694 ,  H01L27/14696 ,  H01L31/0224 ,  H01L31/022475 ,  H01L31/0272 ,  H01L31/0296 ,  H01L31/032 ,  H01L31/109

Abstract: An imaging device with excellent imaging performance is provided. An imaging device that easily performs imaging under a low illuminance condition is provided. A low power consumption imaging device is provided. An imaging device with small variations in characteristics between its pixels is provided. A highly integrated imaging device is provided. A photoelectric conversion element includes a first electrode, and a first layer, a second layer, and a third layer. The first layer is provided between the first electrode and the third layer. The second layer is provided between the first layer and the third layer. The first layer contains selenium. The second layer contains a metal oxide. The third layer contains a metal oxide and also contains at least one of a rare gas atom, phosphorus, and boron. The selenium may be crystalline selenium. The second layer may be a layer of an In—Ga—Zn oxide including c-axis-aligned crystals.

公开(公告)号：US20150041795A1

公开(公告)日：2015-02-12

申请号：US14453889

申请日：2014-08-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tsunenori Suzuki ,  Toshiki Sasaki ,  Riho Kataishi ,  Satoshi Seo

IPC: H01L51/52 ,  H01L51/00 ,  H01L51/50

CPC classification number: H01L51/0072 ,  H01L27/3244 ,  H01L27/3281 ,  H01L51/0052 ,  H01L51/0054 ,  H01L51/0058 ,  H01L51/0059 ,  H01L51/006 ,  H01L51/0061 ,  H01L51/0073 ,  H01L51/0074 ,  H01L51/0085 ,  H01L51/5012 ,  H01L51/5016 ,  H01L51/508 ,  H01L51/529 ,  H01L2251/5361 ,  H01L2251/5384

Abstract: A light-emitting element with improved heat resistance is provided without losing its advantages such as thinness, lightness, and low power consumption. A light-emitting element is provided which includes a first electrode, a second electrode, and an EL layer between the first electrode and the second electrode, in which the EL layer includes a layer containing a condensed aromatic compound or a condensed heteroaromatic compound, and a layer containing 2,9-bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen) in contact with the layer containing the condensed aromatic compound or the condensed heteroaromatic compound.

Abstract translation: 提供具有改善的耐热性的发光元件，而不会失去其薄度，亮度和低功耗等优点。 提供一种发光元件，其包括在第一电极和第二电极之间的第一电极，第二电极和EL层，其中EL层包括含有缩合芳族化合物或缩合杂芳族化合物的层，以及 与含有稠合芳族化合物或缩合杂芳族化合物的层接触的含有2,9-双（萘-2-基）-4,7-二苯基-1,10-菲咯啉（缩写：NBPhen）的层。

公开(公告)号：US09929368B2

公开(公告)日：2018-03-27

申请号：US15116313

申请日：2015-01-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Riho Kataishi ,  Toshiki Sasaki ,  Yusuke Nonaka ,  Hiromi Seo

IPC: H01L29/10 ,  H01L29/12 ,  H01L51/50 ,  C09K11/06 ,  H05B33/14 ,  G06F3/041 ,  H01L51/00 ,  H01L51/52 ,  H01L27/32 ,  F21Y115/10 ,  F21V33/00 ,  F21W131/301

CPC classification number: H01L51/5092 ,  C09K11/06 ,  C09K2211/1007 ,  C09K2211/1044 ,  C09K2211/185 ,  F21V33/0012 ,  F21W2131/301 ,  F21Y2115/10 ,  G06F3/041 ,  H01L27/3209 ,  H01L27/322 ,  H01L27/323 ,  H01L27/3244 ,  H01L27/3262 ,  H01L51/006 ,  H01L51/0081 ,  H01L51/0085 ,  H01L51/5072 ,  H01L51/5206 ,  H01L51/524 ,  H01L51/5246 ,  H01L51/5259 ,  H01L51/5268 ,  H01L51/5278 ,  H01L2251/5353 ,  H01L2251/5361 ,  H05B33/14 ,  H05B33/145

Abstract: A tandem light-emitting element employing an inverted-structure is provided. The light-emitting element includes a cathode, a first EL layer over the cathode, a second EL layer over the first EL layer, an anode over the second EL layer, and an intermediate layer. The intermediate layer is between the first EL layer and the second EL layer. The intermediate layer includes a first layer, a second layer over the first layer, and a third layer over the second layer. The first layer includes a hole-transport material and an electron acceptor. The third layer includes an alkali metal or an alkaline earth metal. The second layer includes an electron-transport material.

公开(公告)号：US20160126500A1

公开(公告)日：2016-05-05

申请号：US14920281

申请日：2015-10-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shogo Uesaka ,  Toshiki Sasaki ,  Riho Kataishi ,  Satoshi Seo

IPC: H01L51/52 ,  H01L51/50

CPC classification number: H01L51/5265 ,  H01L27/323 ,  H01L51/5044 ,  H01L2251/5376

Abstract: To provide a novel light-emitting element or a novel light-emitting device with high emission efficiency and low power consumption, a light-emitting element having a plurality of light-emitting layers between a pair of electrodes includes a lower electrode, a first light-emitting layer over the lower electrode, a charge-generation layer over the first light-emitting layer, a second light-emitting layer over the charge-generation layer, and an upper electrode over the second light-emitting layer. An emission spectrum of the first light-emitting layer peaks at a longer wavelength than an emission spectrum of the second light-emitting layer. A distance of between a bottom surface of the upper electrode and a bottom surface of the first light-emitting layer is less than or equal to 130 nm.

Abstract translation: 为了提供具有高发光效率和低功耗的新型发光元件或新型发光元件，在一对电极之间具有多个发光层的发光元件包括下电极，第一光 在第一发光层上方的电荷产生层，电荷产生层上的第二发光层和第二发光层上的上电极。 第一发光层的发射光谱比第二发光层的发射光谱波长更长。 上电极的底表面和第一发光层的底表面之间的距离小于或等于130nm。

公开(公告)号：US09112086B2

公开(公告)日：2015-08-18

申请号：US13657015

申请日：2012-10-22

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Riho Kataishi ,  Yoshinobu Asami

IPC: H01L29/10 ,  H01L31/0232 ,  H01L31/074 ,  H01L31/0747

CPC classification number: H01L31/074 ,  H01L31/0747 ,  Y02E10/50

Abstract: To provide a photoelectric conversion device which has little light loss caused by light absorption in a window layer and has favorable electric characteristics. The photoelectric conversion device includes, between a pair of electrodes, a light-transmitting semiconductor layer which has one conductivity type and serves as a window layer, and a silicon semiconductor substrate having a conductivity type for forming a p-n junction or a silicon semiconductor layer having a conductivity type for forming a p-i-n junction. The light-transmitting semiconductor layer can be formed using an inorganic compound containing, as its main component, an oxide of a metal belonging to any of Groups 4 to 8 of the periodic table. The band gap of the metal oxide is greater than or equal to 2 eV.

Abstract translation: 提供一种由窗口层中的光吸收引起的光损耗小且具有良好的电气特性的光电转换装置。 光电转换装置在一对电极之间包括具有一种导电类型并用作窗口层的透光半导体层和具有用于形成pn结的导电类型的硅半导体衬底或具有用于形成pn结的硅半导体层或具有 用于形成pin结的导电类型。 可以使用含有属于周期表第4〜8族的金属的氧化物作为其主要成分的无机化合物来形成透光性半导体层。 金属氧化物的带隙大于或等于2eV。

公开(公告)号：US20130214271A1

公开(公告)日：2013-08-22

申请号：US13768233

申请日：2013-02-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshinobu Asami ,  Riho Kataishi ,  Erumu Kikuchi

IPC: H01L29/20

CPC classification number: H01L29/267 ,  H01L29/20 ,  H01L29/7869 ,  H01L29/861 ,  H01L31/0328 ,  H01L31/074 ,  Y02E10/50

Abstract: An oxide semiconductor material having p-type conductivity and a semiconductor device using the oxide semiconductor material are provided. The oxide semiconductor material having p-type conductivity can be provided using a molybdenum oxide material containing molybdenum oxide (MoOy (2

公开(公告)号：US10340470B2

公开(公告)日：2019-07-02

申请号：US15436263

申请日：2017-02-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshiki Sasaki ,  Riho Kataishi ,  Ryohei Yamaoka

IPC: H01L51/54 ,  H01L51/50 ,  H01L27/32 ,  H01L51/52 ,  H01L27/12 ,  H01L29/24 ,  H01L29/786 ,  H01L51/00

Abstract: A light-emitting element includes a cathode, an anode, a light-emitting layer, a first layer, a second layer, and a third layer. The first layer is provided between the cathode and the light-emitting layer. The second layer is provided between the light-emitting layer and the third layer and includes a region in contact with the third layer. The third layer is provided between the second layer and the anode and includes a region in contact with the anode. The first layer and the third layer each include an alkali metal or an alkaline earth metal. The second layer includes a material that has a function of transporting an electron.