Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15420410Application Date: 2017-01-31
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Publication No.: US09666518B1Publication Date: 2017-05-30
- Inventor: Katsuhiko Funatsu , Yukihiro Sato , Takamitsu Kanazawa , Masahiro Koido , Hiroyoshi Taya
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Mattingly & Malur, PC
- Priority: JP2014-199822 20140930
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L25/07 ; H01L23/053 ; H01L23/10 ; H01L23/00 ; H01L21/52 ; H01L21/54 ; H01L23/16 ; H01L29/417 ; H01L23/04 ; H01L23/02 ; H01L23/057 ; H02S40/32
Abstract:
A semiconductor device includes a plurality of metal patterns formed on a ceramic substrate, and a semiconductor chip mounted on some of the plurality of metal patterns. Also, a plurality of hollow portions are formed in peripheral portions of the plurality of metal patterns. In addition, the plurality of hollow portions are not formed in a region overlapping the semiconductor chip in the plurality of metal patterns. Furthermore, the plurality of hollow portions are provided in a plurality of metal patterns arranged at a position closest to the peripheral portion of the top surface of the ceramic substrate among the plurality of metal patterns.
Public/Granted literature
- US20170141086A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-05-18
Information query
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