- 专利标题： Methods of forming integrated circuitry
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申请号： US15335259申请日： 2016-10-26
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公开(公告)号： US09666573B1公开(公告)日： 2017-05-30
- 发明人: Mitsunari Sukekawa
- 申请人： Micron Technology, Inc.
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Wells St. John P.S.
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L25/00 ; H01L23/00 ; H01L21/768 ; H01L25/065
摘要：
Some embodiments include a method of forming integrated circuitry. A first assembly is formed to have a first dielectric material, a first conductive pad and a conductive structure. The first assembly has a first surface which includes a surface of the first dielectric material, a surface of the first conductive pad and a surface of the conductive structure. A second assembly is formed to have a second dielectric material and a second conductive pad. The second assembly has a second surface which includes a surface of the second dielectric material and a surface of the second conductive pad. The first surface is placed directly against the second surface. The surface of the first dielectric material is bonded with the surface of the second dielectric material, and the surface of the first conductive pad is bonded with the surface of the second conductive pad.
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