Approaches for altering the threshold voltage (e.g., to zero threshold voltage) in a fin-type field effect transistor (FinFET) device are provided. In embodiments of the invention, a first N+ region and a second N+ region are formed on a finned substrate that has a p-well construction. A region of the finned substrate located between the first N+ region and the second N+ region is doped with a negative implant species to form an n-well. The size and/or composition of this n-well region can be adjusted in view of the existing p-well construction of the substrate device to change the threshold voltage of the FinFET device (e.g., to yield a zero threshold voltage FinFET device).