Invention Grant
- Patent Title: Integrated hall effect sensor with a biased buried electrode
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Application No.: US14286431Application Date: 2014-05-23
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Publication No.: US09671473B2Publication Date: 2017-06-06
- Inventor: Severin Trochut , Eric Remond
- Applicant: STMicroelectronics SA
- Applicant Address: FR Montrouge
- Assignee: STMicroelectronics SA
- Current Assignee: STMicroelectronics SA
- Current Assignee Address: FR Montrouge
- Agency: Gardere Wynne Sewell LLP
- Priority: FR1354922 20130530
- Main IPC: G01R33/07
- IPC: G01R33/07 ; H01L43/04 ; H01L43/06

Abstract:
The generation of a Hall voltage within a semiconductor film of an integrated Hall effect sensor uses the flow of a current within the semiconductor film when subjected to a magnetic field. The film is disposed on top of an insulating layer, referred to as buried layer, which is itself disposed on top of a carrier substrate containing a buried electrode that is situated under the insulating layer. A biasing voltage is applied to the buried electrode.
Public/Granted literature
- US20140354276A1 INTEGRATED HALL EFFECT SENSOR Public/Granted day:2014-12-04
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