- 专利标题: Silicon-based substrate having first and second portions
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申请号: US14892373申请日: 2014-05-02
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公开(公告)号: US09673052B2公开(公告)日: 2017-06-06
- 发明人: Hiroshi Shikauchi , Ken Sato , Hirokazu Goto , Masaru Shinomiya , Keitaro Tsuchiya , Kazunori Hagimoto
- 申请人: SANKEN ELECTRIC CO., LTD. , SHIN-ETSU HANDOTAI CO., LTD.
- 申请人地址: JP Saitama JP Tokyo
- 专利权人: SANKEN ELECTRIC CO., LTD.,SHIN-ETSU HANDOTAI CO., LTD.
- 当前专利权人: SANKEN ELECTRIC CO., LTD.,SHIN-ETSU HANDOTAI CO., LTD.
- 当前专利权人地址: JP Saitama JP Tokyo
- 代理机构: Oliff PLC
- 优先权: JP2013-116208 20130531
- 国际申请: PCT/JP2014/002405 WO 20140502
- 国际公布: WO2014/192228 WO 20141204
- 主分类号: H01L29/36
- IPC分类号: H01L29/36 ; H01L29/66 ; H01L21/225 ; H01L21/02 ; H01L29/778 ; C30B23/02 ; C30B25/18 ; C30B29/40 ; C30B29/06
摘要:
A silicon-based substrate on which a nitride compound semiconductor layer is formed on a front surface thereof, including a first portion provided on the front surface side which has a first impurity concentration and a second portion provided on an inner side of the first portion which has a second impurity concentration higher than the first impurity concentration, wherein the first impurity concentration being 1×1014 atoms/atomscm3 or more and less than 1×1019 atoms/cm3. Consequently, there is provided the silicon-based substrate in which the crystallinity of the nitride compound semiconductor layer formed on an upper side thereof can be maintained excellently while improving a warpage of the substrate.
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