Invention Grant
- Patent Title: Method for processing a semiconductor substrate and a method for processing a semiconductor wafer
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Application No.: US14541239Application Date: 2014-11-14
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Publication No.: US09673096B2Publication Date: 2017-06-06
- Inventor: Joachim Hirschler , Michael Roesner , Markus Juch Heinrici , Gudrun Stranzl , Martin Mischitz , Martin Zgaga
- Applicant: INFINEON TECHNOLOGIES AG
- Applicant Address: DE Neubiberg AT Graz
- Assignee: INFINEON TECHNOLOGIES AG,Technische Universitaet Graz
- Current Assignee: INFINEON TECHNOLOGIES AG,Technische Universitaet Graz
- Current Assignee Address: DE Neubiberg AT Graz
- Agency: Viering, Jentschura & Partner mbB
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L21/288 ; H01L21/3213 ; H01L21/683 ; H01L23/00
Abstract:
According to various embodiments, a method for processing a semiconductor substrate may include: covering a plurality of die regions of the semiconductor substrate with a metal; forming a plurality of dies from the semiconductor substrate, wherein each die of the plurality of dies is covered with the metal; and, subsequently, annealing the metal covering at least one die of the plurality of dies.
Public/Granted literature
- US20160141208A1 METHOD FOR PROCESSING A SEMICONDUCTOR SUBSTRATE AND A METHOD FOR PROCESSING A SEMICONDUCTOR WAFER Public/Granted day:2016-05-19
Information query
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