Invention Grant
- Patent Title: Method of fabricating integrated circuit devices
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Application No.: US15136450Application Date: 2016-04-22
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Publication No.: US09673099B2Publication Date: 2017-06-06
- Inventor: Myung-Gil Kang , Sung-Bong Kim , Chang-Woo Oh , Dong-Won Kim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: Lee & Morse P.C.
- Priority: KR10-2013-0020612 20130226
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L29/775 ; H01L27/088 ; H01L29/78 ; H01L29/66 ; H01L29/06 ; H01L21/84 ; H01L27/12

Abstract:
An integrated circuit device includes a first transistor having a first channel between a first source/drain, and a second transistor having a second channel between a second source/drain. The first transistor operates based on a first amount of current and the second transistor operates based on a second amount of current different from the first amount of current. The first and second channels have fixed channel widths. The fixed channel widths may be based on fins or nanowires included in the first and second transistors.
Public/Granted literature
- US20160240441A1 METHOD OF FABRICATING INTEGRATED CIRCUIT DEVICES Public/Granted day:2016-08-18
Information query
IPC分类: