Invention Grant
- Patent Title: Semiconductor device with low-conducting buried and/or surface layers
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Application No.: US14576303Application Date: 2014-12-19
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Publication No.: US09673285B2Publication Date: 2017-06-06
- Inventor: Grigory Simin , Michael Shur , Remigijus Gaska
- Applicant: Sensor Electronic Technology, Inc.
- Applicant Address: US SC Columbia
- Assignee: SENSOR ELECTRONIC TECHNOLOGY, INC.
- Current Assignee: SENSOR ELECTRONIC TECHNOLOGY, INC.
- Current Assignee Address: US SC Columbia
- Agency: Labatt, LLC
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/205 ; G06F17/50 ; H01L29/40 ; H01L29/10 ; H01L29/20
Abstract:
A device including one or more low-conducting layers is provided. A low-conducting layer can be located below the channel and one or more attributes of the low-conducting layer can be configured based on a minimum target operating frequency of the device and a charge-discharge time of a trapped charge targeted for removal by the low-conducting layer or a maximum interfering frequency targeted for suppression using the low-conducting layer. For example, a product of the lateral resistance and a capacitance between the low-conducting layer and the channel can be configured to be larger than an inverse of the minimum target operating frequency and the product can be smaller than at least one of: the charge-discharge time or an inverse of the maximum interfering frequency.
Public/Granted literature
- US20150102364A1 Semiconductor Device with Low-Conducting Buried and/or Surface Layers Public/Granted day:2015-04-16
Information query
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