Methods and materials for making a semiconductor device are described. The method includes providing a substrate, forming a middle layer comprising a floating additive polymer (FAP) at an upper surface of the middle layer, the FAP chemically bound to a photoacid generator (PAG) and including a fluorine-containing material over the substrate, forming a photoresist layer over the middle layer, exposing the photoresist layer and the middle layer to an exposure energy to produce acid bound to the middle layer in the exposed areas of the middle layer, and developing the photoresist layer.