- 专利标题: Method of manufacturing semiconductor device
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申请号: US14612613申请日: 2015-02-03
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公开(公告)号: US09679904B2公开(公告)日: 2017-06-13
- 发明人: Wensheng Wang
- 申请人: FUJITSU SEMICONDUCTOR LIMITED
- 申请人地址: JP Yokohama
- 专利权人: FUJITSU SEMICONDUCTOR LIMITED
- 当前专利权人: FUJITSU SEMICONDUCTOR LIMITED
- 当前专利权人地址: JP Yokohama
- 代理机构: Westerman, Hattori, Daniels & Adrian, LLP
- 优先权: JP2011-268359 20111207
- 主分类号: H01L27/115
- IPC分类号: H01L27/115 ; H01L27/11507 ; H01L49/02 ; H01L21/02 ; H01L21/285 ; H01L21/3213
摘要:
A method of manufacturing a semiconductor device includes: forming a conductive film over a semiconductor substrate; forming a first ferroelectric film over the conductive film; forming an amorphous second ferroelectric film over the first ferroelectric film; forming a transition metal oxide material film containing ruthenium over the second ferroelectric film; forming a first conductive metal oxide film over the transition metal oxide material film without exposing the transition metal oxide material film to the air; annealing and crystallizing the second ferroelectric film; and patterning the first conductive metal oxide film, the first ferroelectric film, the second ferroelectric film, and the conductive film to form a ferroelectric capacitor.
公开/授权文献
- US20150221659A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 公开/授权日:2015-08-06