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公开(公告)号：US11164936B2
公开(公告)日：2021-11-02
申请号：US16733542
申请日：2020-01-03
发明人： Youichi Okita , Wensheng Wang , Kazuaki Takai
IPC分类号： H01L29/78 , H01L29/66 , H01L27/11507 , H01L49/02 , H01L27/1159
摘要： A first-layer insulating film having a barrier property against a determined element contained in a ferroelectric capacitor as well as an oxygen permeability, a hydrogen permeability, and a water permeability is formed over a surface of the ferroelectric capacitor formed over a substrate. After that, heat treatment is performed in an oxidizing atmosphere. After the heat treatment, a second insulating film having a hydrogen permeability and a water permeability lower than those of the first-layer insulating film respectively is formed over a surface of the first-layer insulating film in a non-reducing atmosphere. A third-layer insulating film is formed over a surface of the second-layer insulating film. By doing so, degradation of a ferroelectric film under and after the formation of a semiconductor device having the ferroelectric capacitor is suppressed and deterioration in the characteristics of the ferroelectric capacitor is suppressed.
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公开(公告)号：US10269813B2
公开(公告)日：2019-04-23
申请号：US15886411
申请日：2018-02-01
发明人： Youichi Okita , Hideki Ito , Wensheng Wang
IPC分类号： H01L27/11507 , H01L49/02
摘要： A method of manufacturing a semiconductor device includes: forming an insulating film above a semiconductor substrate; forming a conductive film on the insulating film; forming a dielectric film on the conductive film; forming a plurality of upper electrodes at intervals on the dielectric film; forming a first protective insulating film on the upper electrodes and the dielectric film by a sputtering method; forming a second protective insulating film on the first protective insulating film by an atomic layer deposition method, thereby filling gaps of a grain boundary of the dielectric film with the second protective insulating film; and patterning the conductive film after the second protective insulating film is formed to provide a lower electrode.
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公开(公告)号：US08748962B2
公开(公告)日：2014-06-10
申请号：US13657325
申请日：2012-10-22
发明人： Wensheng Wang
IPC分类号： H01L27/108
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/65 , H01L28/75
摘要： A semiconductor device includes a capacitor dielectric film formed on a lower electrode and made of a ferroelectric material, and an upper electrode formed on a capacitor dielectric film, wherein the lower electrode includes a lowest conductive layer and an upper conductive layer, the lowest conductive layer being made of a noble metal other than iridium, and the upper conductive layer being formed on the lowest conductive layer and made of a conductive material, which is different from a material for the lowest conductive layer, and which is other than platinum.
摘要翻译： 半导体器件包括形成在下电极上并由铁电材料制成的电容器电介质膜和形成在电容器电介质膜上的上电极，其中下电极包括最低导电层和上导电层，最低导电层 由除铱之外的贵金属制成，并且所述上导电层形成在最低导电层上，并且由不同于用于最低导电层的材料的不同于铂的导电材料制成。
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公开(公告)号：US20130149794A1
公开(公告)日：2013-06-13
申请号：US13654751
申请日：2012-10-18
发明人： Wensheng Wang
IPC分类号： H01L21/02
CPC分类号： H01L27/11507 , H01L21/02197 , H01L21/02356 , H01L21/28568 , H01L21/3213 , H01L28/55 , H01L28/56 , H01L28/65 , H01L28/75
摘要： A method of manufacturing a semiconductor device includes: forming a conductive film over a semiconductor substrate; forming a first ferroelectric film over the conductive film; forming an amorphous second ferroelectric film over the first ferroelectric film; forming a transition metal oxide material film containing ruthenium over the second ferroelectric film; forming a first conductive metal oxide film over the transition metal oxide material film without exposing the transition metal oxide material film to the air; annealing and crystallizing the second ferroelectric film; and patterning the first conductive metal oxide film, the first ferroelectric film, the second ferroelectric film, and the conductive film to form a ferroelectric capacitor.
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公开(公告)号：US20130052753A1
公开(公告)日：2013-02-28
申请号：US13657362
申请日：2012-10-22
发明人： Wensheng Wang
IPC分类号： H01L21/02
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/65 , H01L28/75
摘要： A method of manufacturing a semiconductor device comprising the steps of: forming a first interlayer insulating film over a substrate; forming a first conductive film over the first interlayer insulating film; forming a ferroelectric film on the first conductive film; forming a second conductive film on the ferroelectric film; forming an upper electrode of a capacitor by patterning the second conductive film; forming a capacitor dielectric film by patterning the ferroelectric film; and forming a lower electrode of the capacitor by patterning the first conductive film, wherein forming the first conductive film includes: forming a lower conductive layer made of a noble metal other than iridium over the first interlayer insulating film; and forming an upper conductive layer on the lower conductive layer, the upper conductive layer being made of a conductive material, which is different from a material for the lower conductive layer, and which is other than platinum.
摘要翻译： 一种制造半导体器件的方法，包括以下步骤：在衬底上形成第一层间绝缘膜; 在所述第一层间绝缘膜上形成第一导电膜; 在第一导电膜上形成铁电体膜; 在所述铁电膜上形成第二导电膜; 通过图案化第二导电膜形成电容器的上电极; 通过图案化铁电体膜形成电容器电介质膜; 以及通过对所述第一导电膜进行构图来形成所述电容器的下电极，其中形成所述第一导电膜包括：在所述第一层间绝缘膜上形成由铱以外的贵金属制成的下导电层; 以及在所述下导电层上形成上导电层，所述上导电层由导电材料制成，所述导电材料与所述下导电层的材料不同，并且不是铂。
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公开(公告)号：US09917092B2
公开(公告)日：2018-03-13
申请号：US14980071
申请日：2015-12-28
发明人： Youichi Okita , Hideki Ito , Wensheng Wang
IPC分类号： H01L27/115 , H01L49/02 , H01L27/11507
CPC分类号： H01L27/11507 , H01L28/56 , H01L28/57
摘要： A method of manufacturing a semiconductor device includes: forming an insulating film above a semiconductor substrate; forming a conductive film on the insulating film; forming a dielectric film on the conductive film; forming a plurality of upper electrodes at intervals on the dielectric film; forming a first protective insulating film on the upper electrodes and the dielectric film by a sputtering method; forming a second protective insulating film on the first protective insulating film by an atomic layer deposition method, thereby filling gaps of a grain boundary of the dielectric film with the second protective insulating film; and patterning the conductive film after the second protective insulating film is formed to provide a lower electrode.
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公开(公告)号：US20170287920A1
公开(公告)日：2017-10-05
申请号：US15623710
申请日：2017-06-15
发明人： Wensheng Wang
IPC分类号： H01L27/11507 , H01L49/02 , H01L21/324 , H01L21/768
CPC分类号： H01L27/11507 , H01L21/324 , H01L21/7687 , H01L21/76897 , H01L28/57 , H01L28/65 , H01L28/75
摘要： A semiconductor device and a manufacturing method for the same are provided in such a manner that the oxygen barrier film and the conductive plug in the base of a capacitor are prevented from being abnormally oxidized. A capacitor is formed by layering a lower electrode, a dielectric film including a ferroelectric substance or a high dielectric substance, and an upper electrode in this order on top of an interlayer insulation film with at least a conductive oxygen barrier film in between, and at least a portion of a side of the conductive oxygen barrier film is covered with an oxygen entering portion or an insulating oxygen barrier film.
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公开(公告)号：US09472611B2
公开(公告)日：2016-10-18
申请号：US14797405
申请日：2015-07-13
发明人： Hitoshi Saito , Wensheng Wang
IPC分类号： H01L29/76 , H01L49/02 , H01L27/06 , H01L27/115
CPC分类号： H01L28/75 , H01L27/0629 , H01L27/11507 , H01L27/11509 , H01L28/87
摘要： A semiconductor device includes: a semiconductor substrate; a base above the semiconductor substrate; a first conductive plug in the base; a memory cell region in the base; and a logic circuit region connected to the memory cell region, the logic circuit including a first capacitor. The first capacitor includes: a first bottom electrode, a part of a lower surface of the first bottom electrode being in contact with the first conductive plug; a first insulating film on the first bottom electrode; and a first top electrode on the first insulating film. The first top electrode is spaced apart from the first conductive plug in planar view.
摘要翻译： 半导体器件包括：半导体衬底; 在半导体衬底上方的基底; 基座中的第一导电插头; 基底中的记忆单元区域; 以及与存储单元区域连接的逻辑电路区域，所述逻辑电路包括第一电容器。 第一电容器包括：第一底部电极，第一底部电极的下表面的一部分与第一导电插塞接触; 在第一底部电极上的第一绝缘膜; 以及第一绝缘膜上的第一顶部电极。 在平面视图中，第一顶部电极与第一导电插塞间隔开。
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公开(公告)号：US08778756B2
公开(公告)日：2014-07-15
申请号：US13657362
申请日：2012-10-22
发明人： Wensheng Wang
IPC分类号： H01L21/8242
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/65 , H01L28/75
摘要： A method of manufacturing a semiconductor device comprising the steps of: forming a first interlayer insulating film over a substrate; forming a first conductive film over the first interlayer insulating film; forming a ferroelectric film on the first conductive film; forming a second conductive film on the ferroelectric film; forming an upper electrode of a capacitor by patterning the second conductive film; forming a capacitor dielectric film by patterning the ferroelectric film; and forming a lower electrode of the capacitor by patterning the first conductive film, wherein forming the first conductive film includes: forming a lower conductive layer made of a noble metal other than iridium over the first interlayer insulating film; and forming an upper conductive layer on the lower conductive layer, the upper conductive layer being made of a conductive material, which is different from a material for the lower conductive layer, and which is other than platinum.
摘要翻译： 一种制造半导体器件的方法，包括以下步骤：在衬底上形成第一层间绝缘膜; 在所述第一层间绝缘膜上形成第一导电膜; 在第一导电膜上形成铁电体膜; 在所述铁电膜上形成第二导电膜; 通过图案化第二导电膜形成电容器的上电极; 通过图案化铁电体膜形成电容器电介质膜; 以及通过对所述第一导电膜进行构图来形成所述电容器的下电极，其中形成所述第一导电膜包括：在所述第一层间绝缘膜上形成由铱以外的贵金属制成的下导电层; 以及在所述下导电层上形成上导电层，所述上导电层由导电材料制成，所述导电材料与所述下导电层的材料不同，并且不是铂。
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公开(公告)号：US20130140676A1
公开(公告)日：2013-06-06
申请号：US13756675
申请日：2013-02-01
发明人： Wensheng Wang
IPC分类号： H01L49/02
CPC分类号： H01L28/40 , H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/65
摘要： A semiconductor device includes a substrate and a ferroelectric capacitor including a lower electrode, a ferroelectric film, and an upper electrode. The upper electrode includes a first layer formed of an oxide whose stoichiometric composition is expressed as AOx1 and whose actual composition is expressed as AOx2; a second layer formed on the first layer and formed of an oxide whose stoichiometric composition is expressed as BOy1 and whose actual composition is expressed as BOy2; and a metal layer formed on the second layer. The second layer is higher in ratio of oxidation than the first layer. The composition parameters x1, x2, y1, and y2 satisfy y2/y1>x2/x1, and the second layer includes an interface layer of the stoichiometric composition formed at an interface with the metal layer. The interface layer is higher in ratio of oxidation than the rest of the second layer.
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