A memory structure includes a 3D array of memory cells, a plurality of first conductive lines disposed on the 3D array, a plurality of second conductive lines disposed on the first conductive lines, a top metal plate disposed on the second conductive lines, and at least one strapping structure. The second conductive lines and the first conductive lines extend on different directions. The at least one strapping structure is configured for the first conductive lines and correspondingly disposed on at least one dummy region of the 3D array. Each strapping structure includes a connecting structure and a jumping line. The jumping line is disposed on and coupled to the connecting structure, and coupled to the top metal plate. The jumping line and the second conductive lines extend on the same direction.