Invention Grant
- Patent Title: Integrated circuit with well and substrate contacts
-
Application No.: US14876123Application Date: 2015-10-06
-
Publication No.: US09679915B2Publication Date: 2017-06-13
- Inventor: Ming-Zhang Kuo , Ho-Chieh Hsieh , Hui-Zhong Zhuang , Kuo-Feng Tseng , Lee-Chung Lu , Cheng-Chung Lin , Sang Hoo Dhong
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW
- Agency: Hauptman Ham, LLP
- Main IPC: H01L27/118
- IPC: H01L27/118

Abstract:
An integrated circuit comprises standard cells arranged in rows and columns. The integrated circuit also comprises tap cells arranged in rows and columns. The tap cells each comprise a substrate having a first dopant type and a thickness from a first surface of the substrate to a second surface of the substrate. The integrated circuit further comprises a well region in the substrate having a second dopant type different from the first dopant type and a depth from the first surface of the substrate less than the thickness of the substrate. The integrated circuit additionally comprises a first quantity of rows of tap cells and a second quantity of rows of tap cells less than the first quantity. Each row of the first quantity of rows of tap cells comprises at least one well contact, and each row of tap cells of the second quantity of tap cells comprises at least one substrate contact.
Public/Granted literature
- US20160336343A1 INTEGRATED CIRCUIT WITH WELL AND SUBSTRATE CONTACTS Public/Granted day:2016-11-17
Information query
IPC分类: