Invention Grant
- Patent Title: Thin strain relaxed buffers with multilayer film stacks
-
Application No.: US15133683Application Date: 2016-04-20
-
Publication No.: US09679972B1Publication Date: 2017-06-13
- Inventor: Jody Fronheiser , Murat Kerem Akarvardar , Stephen Bedell , Joel Kanyandekwe
- Applicant: GLOBALFOUNDRIES Inc. , International Business Machines Corporation , STMicroelectronics, Inc.
- Applicant Address: KY Grand Cayman US NY Armonk US TX Coppell
- Assignee: GLOBALFOUNDRIES Inc.,International Business Machines Corporation,STMicroelectronics, Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.,International Business Machines Corporation,STMicroelectronics, Inc.
- Current Assignee Address: KY Grand Cayman US NY Armonk US TX Coppell
- Agency: Heslin Rothenberg Farley and Mesiti PC
- Agent Nicholas Mesiti
- Main IPC: H01L29/775
- IPC: H01L29/775 ; H01L29/165 ; H01L21/02 ; H01L29/78
Abstract:
A semiconductor structure can include a substrate and a substrate layer. The substrate can be formed of silicon and the substrate layer can be formed of silicon germanium. Above the substrate and under the substrate layer there can be provided a multilayer substructure. The multilayer substructure can include a first layer and a second layer. The first layer can be formed of a first material and the second layer can be formed of second material. A method can include forming a multilayer substructure on a substrate, annealing the multilayer substructure, and forming a substrate layer on the multilayer substructure.
Information query
IPC分类:
