A hetero-substrate, a nitride-based semiconductor light emitting device, and a method of manufacturing the same are provided. The hetero-substrate may include a substrate including a silicon semiconductor, a buffer layer disposed on the substrate, a first semiconductor layer disposed on the buffer layer and including a nitride semiconductor, a second semiconductor layer disposed on the first semiconductor layer and including a first conductive type nitride semiconductor having a first doping concentration, and a stress control structure disposed between the first semiconductor layer and the second semiconductor layer and including at least one stress compensation layer and at least one third semiconductor layer including a first conductive type nitride semiconductor having a second doping concentration that is the same or lower than the first doping concentration.