A method for driving a nonvolatile memory device using a resistive element is provided. The method includes storing data in a page buffer, the data including a first data block and a second data block, writing the first data block to a memory cell, performing a verify-read operation on the first data block of the memory cell region, writing the second data block to the memory cell region, and performing a verify-read operation on the second data block of the memory cell region, wherein the first data block and the second data block are smaller than the page buffer in size.