Invention Grant
- Patent Title: Self-destructive circuits under radiation
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Application No.: US14750636Application Date: 2015-06-25
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Publication No.: US09685417B2Publication Date: 2017-06-20
- Inventor: Qing Cao , Kangguo Cheng , Fei Liu
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Michael J. Chang, LLC
- Agent Vazken Alexanian
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/29 ; H01L21/56

Abstract:
Circuits which self-destruct under radiation are provided. In one aspect, a method for creating a radiation-sensitive circuit is provided. The method includes the step of: connecting an integrated circuit to a power supply and to a ground in parallel with at least one dosimeter device, wherein the dosimeter device is configured to change from being an insulator to being a conductor under radiation. Radiation-sensitive circuits are also provided.
Public/Granted literature
- US20160379942A1 Self-Destructive Circuits Under Radiation Public/Granted day:2016-12-29
Information query
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