Invention Grant
- Patent Title: Embedded metal-insulator-metal capacitor
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Application No.: US15266439Application Date: 2016-09-15
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Publication No.: US09685497B2Publication Date: 2017-06-20
- Inventor: Robert Seidel , Torsten Huisinga
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm PLLC
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L21/768 ; H01L21/02

Abstract:
A semiconductor device includes a first metallization layer including a first dielectric layer. A first conductive layer and a first conductive structure are embedded in the first dielectric layer. A second dielectric layer is disposed on the first metallization layer. A second conductive layer is disposed on the second dielectric layer and has a lateral dimension in a lateral direction larger than a lateral dimension of the first conductive layer in the lateral direction. A third dielectric layer is disposed on the second conductive layer. A first contact is disposed in the third dielectric layer and extends through the second conductive structure in a first peripheric region thereof that does not overlap the first conductive layer to contact the first conductive structure. A capacitor structure includes the first conductive layer, the second dielectric layer and the second conductive layer.
Public/Granted literature
- US20170005159A1 EMBEDDED METAL-INSULATOR-METAL CAPACITOR Public/Granted day:2017-01-05
Information query
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