Invention Grant
- Patent Title: Dual-band low noise amplifier
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Application No.: US14481251Application Date: 2014-09-09
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Publication No.: US09692368B2Publication Date: 2017-06-27
- Inventor: Saihua Lin , Anup Savla , Mounir Youssef Bohsali
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Qualcomm Incorporated-Toler
- Main IPC: H03F3/191
- IPC: H03F3/191 ; H03F1/56 ; H03F1/22 ; H03F1/26

Abstract:
An apparatus includes amplification circuitry configured to amplify a radio frequency (RF) signal. The apparatus also includes differential inductors coupled to an output of the amplification circuitry. The differential inductors include a first inductor serially coupled to a second inductor, and the differential inductors are configured to filter the RF signal and to provide a differential output.
Public/Granted literature
- US20160072456A1 DUAL-BAND LOW NOISE AMPLIFIER Public/Granted day:2016-03-10
Information query
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