Invention Grant
- Patent Title: Piezoresistive boron doped diamond nanowire
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Application No.: US15231421Application Date: 2016-08-08
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Publication No.: US09696222B2Publication Date: 2017-07-04
- Inventor: Anirudha V. Sumant , Xinpeng Wang
- Applicant: UCHICAGO ARGONNE, LLC
- Applicant Address: US IL Chicago
- Assignee: UCHICAGO ARGONNE, LLC
- Current Assignee: UCHICAGO ARGONNE, LLC
- Current Assignee Address: US IL Chicago
- Agency: Foley & Lardner LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; G01L1/18 ; H01L29/04 ; H01L29/16 ; H01L21/04 ; H01L21/308 ; G01B7/14 ; H01L29/06 ; H01L29/167 ; G01B7/16

Abstract:
A UNCD nanowire comprises a first end electrically coupled to a first contact pad which is disposed on a substrate. A second end is electrically coupled to a second contact pad also disposed on the substrate. The UNCD nanowire is doped with a dopant and disposed over the substrate. The UNCD nanowire is movable between a first configuration in which no force is exerted on the UNCD nanowire and a second configuration in which the UNCD nanowire bends about the first end and the second end in response to a force. The UNCD nanowire has a first resistance in the first configuration and a second resistance in the second configuration which is different from the first resistance. The UNCD nanowire is structured to have a gauge factor of at least about 70, for example, in the range of about 70 to about 1,800.
Public/Granted literature
- US20160349125A1 PIEZORESISTIVE BORON DOPED DIAMOND NANOWIRE Public/Granted day:2016-12-01
Information query
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