- 专利标题： Memory device with combined non-volatile memory (NVM) and volatile memory
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申请号： US14331274申请日： 2014-07-15
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公开(公告)号： US09697897B2公开(公告)日： 2017-07-04
- 发明人: Michael A Sadd , Anirban Roy
- 申请人： Michael A Sadd , Anirban Roy
- 申请人地址： US TX Austin
- 专利权人： NXP USA, Inc.
- 当前专利权人： NXP USA, Inc.
- 当前专利权人地址： US TX Austin
- 主分类号： G11C14/00
- IPC分类号： G11C14/00
摘要：
A memory device includes a volatile memory cell, a non-volatile memory cell, and a transfer system connected between the volatile memory cell and the non-volatile memory cell. The transfer circuit allows data transfer from the volatile memory cell to the non-volatile memory cell when the memory device is operating in a first mode, and from the non-volatile memory cell to the volatile memory cell when the memory device is operating in a second mode.
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