- 专利标题： Semiconductor device
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申请号： US15168349申请日： 2016-05-31
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公开(公告)号： US09698154B2公开(公告)日： 2017-07-04
- 发明人: Joon Sung Lim , Kyu Baik Chang , Sung Hoi Hur , Woo Jung Kim
- 申请人： Joon Sung Lim , Kyu Baik Chang , Sung Hoi Hur , Woo Jung Kim
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2015-0110977 20150806
- 主分类号： H01L21/764
- IPC分类号： H01L21/764 ; H01L27/115 ; H01L27/11575 ; H01L27/1157 ; H01L27/11573 ; H01L21/8238 ; H01L21/8234
摘要：
A semiconductor device includes a substrate, a plurality of memory cell arrays, and an air gap structure. The substrate includes a cell region, a peripheral circuit region, and a boundary region. The boundary region is between the cell region and the peripheral circuit region. The plurality of memory cell arrays are on the cell region. The air gap structure includes a trench formed in the boundary region of the substrate. The air gap structure defines an air gap.
公开/授权文献
- US20170040335A1 SEMICONDUCTOR DEVICE 公开/授权日：2017-02-09
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