公开(公告)号：US09698154B2

公开(公告)日：2017-07-04

申请号：US15168349

申请日：2016-05-31

申请人： Joon Sung Lim ,  Kyu Baik Chang ,  Sung Hoi Hur ,  Woo Jung Kim

发明人： Joon Sung Lim ,  Kyu Baik Chang ,  Sung Hoi Hur ,  Woo Jung Kim

IPC分类号： H01L21/764 ,  H01L27/115 ,  H01L27/11575 ,  H01L27/1157 ,  H01L27/11573 ,  H01L21/8238 ,  H01L21/8234

CPC分类号： H01L27/11575 ,  H01L21/823481 ,  H01L21/823878 ,  H01L27/11548 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11582 ,  H01L28/00

摘要： A semiconductor device includes a substrate, a plurality of memory cell arrays, and an air gap structure. The substrate includes a cell region, a peripheral circuit region, and a boundary region. The boundary region is between the cell region and the peripheral circuit region. The plurality of memory cell arrays are on the cell region. The air gap structure includes a trench formed in the boundary region of the substrate. The air gap structure defines an air gap.