Invention Grant
- Patent Title: Magnetoresistive sensor with SAF structure having amorphous alloy layer
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Application No.: US14962950Application Date: 2015-12-08
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Publication No.: US09704517B2Publication Date: 2017-07-11
- Inventor: Eric W. Singleton , Liwen Tan , Jae-Young Yi
- Applicant: Seagate Technology LLC
- Applicant Address: US CA Cupertino
- Assignee: SEAGATE TECHNOLOGY LLC
- Current Assignee: SEAGATE TECHNOLOGY LLC
- Current Assignee Address: US CA Cupertino
- Agency: Holzer Patel Drennan
- Main IPC: G11B5/39
- IPC: G11B5/39 ; G11B5/11 ; G01R33/09 ; H01L43/08 ; G01R33/00 ; G01R33/025 ; H01L43/10 ; H01F10/32

Abstract:
A magnetoresistive (MR) sensor including a synthetic antiferromagnetic (SAF) structure that is magnetically coupled to a side shield element. The SAF structure includes at least one magnetic amorphous layer that is an alloy of a ferromagnetic material and a refractory material. The amorphous magnetic layer may be in contact with a non-magnetic layer and antiferromagnetically coupled to a layer in contact with an opposite surface of the non-magnetic layer.
Public/Granted literature
- US20160093319A1 MAGNETORESISTIVE SENSOR WITH SAF STRUCTURE HAVING AMORPHOUS ALLOY LAYER Public/Granted day:2016-03-31
Information query
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