Invention Grant
- Patent Title: Method for controlling surface charge on wafer surface in semiconductor fabrication
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Application No.: US14688191Application Date: 2015-04-16
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Publication No.: US09704714B2Publication Date: 2017-07-11
- Inventor: Weibo Yu , Jui-Ping Chuang , Chen-Hsiang Lu , Shao-Yen Ku
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
- Current Assignee Address: TW Hsin-Chu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L21/263 ; H05F3/06 ; H05F3/04 ; H01L21/67 ; H01J37/00 ; H01L21/677
Abstract:
A method for processing a semiconductor wafer is provided. The method includes performing a discharging process over the semiconductor wafer in a discharging chamber which is enclosed. The method further includes processing the semiconductor wafer by use of a first processing module after the discharging process. During the discharging process, charged particles applied on the semiconductor wafer are tuned based on the characteristics of the surface of the semiconductor wafer.
Public/Granted literature
- US20160307757A1 METHOD FOR CONTROLLING SURFACE CHARGE ON WAFER SURFACE IN SEMICONDUCTOR FABRICATION Public/Granted day:2016-10-20
Information query
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