Various embodiments include approaches for predicting unity gain frequency in a MOSFET. In some cases, a method includes predicting a unity gain frequency (fT) in a MOSFET device in a manufacturing line, the method including: measuring a first set of in-line direct current (DC) parameters of the MOSFET on the manufacturing line at a first drain voltage (Vd1); extracting a transconductance (Gm) from the first set of in-line DC parameters as a function of a gate-voltage (Vg) and the first drain-voltage (Vd1); measuring a second set of in-line DC parameters of the MOSFET on the manufacturing line at a second drain voltage (Vd2); extracting a total gate capacitance (Cgg) from the second set of in-line DC parameters as a function of the gate-voltage (Vg); and predicting the unity gain frequency (fT) of the MOSFET based upon the extracted transconductance (Gm) and the extracted total gate capacitance (Cgg).