Invention Grant
- Patent Title: High brightness multijunction diode stacking
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Application No.: US14984602Application Date: 2015-12-30
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Publication No.: US09705289B2Publication Date: 2017-07-11
- Inventor: Manoj Kanskar , Raymond Kirk Price , Jay Small , David Martin Hemenway , Zhigang Chen
- Applicant: NLIGHT, INC.
- Applicant Address: US WA Vancouver
- Assignee: NLIGHT, INC.
- Current Assignee: NLIGHT, INC.
- Current Assignee Address: US WA Vancouver
- Agency: Birdwell & Janke, LLP
- Main IPC: G02B27/30
- IPC: G02B27/30 ; H01S5/40 ; H01S5/022 ; G02B6/42 ; G02B5/09 ; G02B5/10 ; H01S3/08

Abstract:
An apparatus includes at least one multijunction diode laser situated to emit a plurality of beams along respective mutually parallel propagation axes, each beam having an associated mutually parallel slow axes and associated collinear fast axes, a fast axis collimator situated to receive and collimate the plurality of beams along the corresponding fast axes so as to produce corresponding fast axis collimated beams that propagate along associated non-parallel axes, and a reflector situated to receive the plurality of fast axis collimated beams and to reflect the beams so that the reflected fast axis collimated beams propagate along substantially parallel axes.
Public/Granted literature
- US20160181764A1 HIGH BRIGHTNESS MULTIJUNCTION DIODE STACKING Public/Granted day:2016-06-23
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