Invention Grant
- Patent Title: Area-optimized retention flop implementation
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Application No.: US14986444Application Date: 2015-12-31
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Publication No.: US09705481B1Publication Date: 2017-07-11
- Inventor: Sudesh Chandra Srivastava , Vivek Singhal
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Ronald O. Neerings; Charles A. Brill; Frank D. Cimino
- Main IPC: H03K3/35
- IPC: H03K3/35 ; H03K3/3562 ; H01L27/088 ; H01L27/02 ; H01L29/10

Abstract:
An integrated circuit device having a p-well plane, a plurality of substantially parallel n-well rows, and a logic cell. The p-well plane is comprised of p-type semiconductor material. Each n-well row comprises an n-type layer disposed on the surface of the p-well plane. The plurality of n-well rows includes a first n-well row and a second n-well row. The logic cell is arranged on the p-well plane and the footprint of the logic cell encompasses both the first and second n-well rows.
Public/Granted literature
- US20170194949A1 AREA-OPTIMIZED RETENTION FLOP IMPLEMENTATION Public/Granted day:2017-07-06
Information query
IPC分类: