Area-optimized retention flop implementation
Abstract:
An integrated circuit device having a p-well plane, a plurality of substantially parallel n-well rows, and a logic cell. The p-well plane is comprised of p-type semiconductor material. Each n-well row comprises an n-type layer disposed on the surface of the p-well plane. The plurality of n-well rows includes a first n-well row and a second n-well row. The logic cell is arranged on the p-well plane and the footprint of the logic cell encompasses both the first and second n-well rows.
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