Invention Grant
- Patent Title: Apparatus and methods including a bipolar junction transistor coupled to a string of memory cells
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Application No.: US14165072Application Date: 2014-01-27
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Publication No.: US09711223B2Publication Date: 2017-07-18
- Inventor: Paolo Tessariol , Roberto Gastaldi
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/04 ; G11C16/10
Abstract:
Some embodiments include apparatus and methods having a string of memory cells, a conductive line and a bipolar junction transistor configured to selectively couple the string of memory cells to the conductive line. Other embodiments including additional apparatus and methods are described.
Public/Granted literature
- US20140140134A1 APPARATUS AND METHODS INCLUDING A BIPOLAR JUNCTION TRANSISTOR COUPLED TO A STRING OF MEMORY CELLS Public/Granted day:2014-05-22
Information query
