- 专利标题: Semiconductor devices with recessed interconnects
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申请号: US14733330申请日: 2015-06-08
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公开(公告)号: US09711457B2公开(公告)日: 2017-07-18
- 发明人: David S. Pratt
- 申请人: Micron Technology, Inc.
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Perkins Coie LLP
- 主分类号: H01L23/12
- IPC分类号: H01L23/12 ; H01L23/053 ; H01L23/538 ; H01L21/768 ; H01L25/065 ; H01L25/00 ; H01L23/29 ; H01L23/31 ; H01L23/00
摘要:
Semiconductor devices and methods of manufacturing semiconductor devices. One example of a method of fabricating a semiconductor device comprises forming a conductive feature extending through a semiconductor substrate such that the conductive feature has a first end and a second end opposite the first end, and wherein the second end projects outwardly from a surface of the substrate. The method can further include forming a dielectric layer over the surface of the substrate and the second end of the conductive feature such that the dielectric layer has an original thickness. The method can also include removing a portion of the dielectric layer to an intermediate depth less than the original thickness such that at least a portion of the second end of the conductive feature is exposed.
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